a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982-1200 fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 10 ma 65 --- v bv ces i c = 200 ma 65 --- v bv ceo i c = 200 ma 35 --- v bv ebo i e = 10 ma 4.0 --- v i ces v ce = 30 v --- 10 ma i cbo v ce = 30 v --- 1.0 ma h fe v ce = 5.0 v i c = 500 ma 5.0 200 --- c ob v cb = 30v f = 1.0 mhz --- 65 pf g p h h c v ce = 28 v p in = 7.0 w f = 175 mhz p out = 30 w (pep) 7.6 60 --- db % npn silicon rf power transistor hf30-28s description: the asi hf30-28s is designed for features: p g = 20 db min. at 30 w/30 mhz imd 3 = -30 dbc max. at 30 w (pep) omnigold ? metalization system maximum ratings i c 5.0 a v cb 65 v v ce 35 v v ebo 4.0 v p diss 60 w @ t c = 25 o c t j -65 o c to +200 o c t stg -65 o c to +150 o c q q jc 2.9 o c/w package style .380 4l stud order code: asi10605 minimum inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 b c d e f g a maximum .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm h .090 / 2.29 .100 / 2.54 dim .220 / 5.59 .230 / 5.84 .490 / 12.45 .450 / 11.43 i j .155 / 3.94 .175 / 4.45 .750 / 19.05 .980 / 24.89 .100 / 2.54 e f d ?c b .112x45 g h j i a #8-32 unc-2a e e c b
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